FDZ5047N

FDZ5047N Datasheet

FDZ5047N

Part	Datasheet
FDZ5047N	FDZ5047N (pdf)

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FDZ5047N January 2004 FDZ5047N 30V N-Channel Logic Level BGA MOSFET Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON . These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications resulting in DC/DC power supply designs with higher overall efficiency. • DC/DC converters • Solenoid drive • 22 A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V • Occupies only mm2 of PCB area 1/5 of the area of a TO-220 package • Ultra-thin package less than mm height when mounted to PCB • Outstanding thermal transfer characteristics • Ultra-low gate charge x RDS ON product F5047 Pin 1 DSSSSD DGS S SD Bottom Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Total Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 5047N FDZ5047N 13’’ Fairchild Semiconductor Corporation. Ratings 30 ±20 22 75 to +150 Tape width 12mm Units V A W °C °C/W Quantity 3000 units FDZ5047N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V mV/°C IGSSF Forward Leakage VGS = 20 V, VDS = 0 V 100 nA IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static

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FDZ5047N

January 2004

FDZ5047N
30V N-Channel Logic Level BGA MOSFET

Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON .

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications resulting in DC/DC power supply designs with higher overall efficiency.
• DC/DC converters
• Solenoid drive
• 22 A, 30 V.

RDS ON = VGS = 10 V RDS ON = VGS = V
• Occupies only mm2 of PCB area 1/5 of the area of a TO-220 package
• Ultra-thin package less than mm height when mounted to PCB
• Outstanding thermal transfer characteristics
• Ultra-low gate charge x RDS ON product

F5047

Pin 1

DSSSSD DGS S SD

Bottom

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Total Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

Note 1a Note 1 Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
5047N

FDZ5047N
13’’

Fairchild Semiconductor Corporation.

Ratings
30 ±20 22 75 to +150

Tape width 12mm

Units

V A W °C
°C/W

Quantity 3000 units

FDZ5047N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V
mV/°C

IGSSF

Forward Leakage

VGS = 20 V, VDS = 0 V
100 nA

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

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Datasheet ID: FDZ5047N 514456