FDZ293P P-Channel V Specified BGA MOSFET
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FDZ293P P-Channel V Specified BGA MOSFET Feb 2006 FDZ293P P-Channel V Specified BGA MOSFET Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS on . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS on . • Battery management • Load switch • Battery protection G AT E • A, V rDS on = 46 VGS = V rDS on = 72 VGS = V • Occupies only mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package less than mm height when mounted to PCB • Outstanding thermal transfer characteristics 4 times better than SSOT-6 • Ultra-low Qg x rDS on figure-of-merit • High power and current handling capability. Bottom Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDZ293P 13” 2005 Fairchild Semiconductor Corporation Ratings ±12 to +150 Tape width 8mm Units W °C °C/W Quantity 10000 units FDZ293P P-Channel V Specified BGA MOSFET Electrical CharacteristicsTA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Leakage. VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = ±12 V, VGS = 0 V VDS = 0 V V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on |
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