FDZ206P P-Channel 2.5V Specified BGA MOSFET
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FDZ206P (pdf) |
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FDZ206P P-Channel 2.5V Specified BGA MOSFET February 2006 FDZ206P P-Channel 2.5V Specified BGA MOSFET Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS on . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS on . • Battery management • Load switch • Battery protection Gate • A, V. rDS on = VGS = V rDS on = VGS = V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package less than mm height when mounted to PCB • mm ball pitch • x 4 mm2 footprint • High power and current handling capability Bottom Index slot Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Steady State Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 206P FDZ206P 13” Ratings ±12 to +150 Tape width 12mm Units V A W °C °C/W Quantity 4000 2006 Fairchild Semiconductor Corporation FDZ206P P-Channel 2.5V Specified BGA MOSFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient rDS on Static ID on Drain Current |
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