FDZ203N
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FDZ203N (pdf) |
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FDZ203N FDZ203N N-Channel 2.5V Specified BGA MOSFET April 2008 Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON . • Battery management • Load switch • Battery protection GATE • A, 20 V. RDS ON = 18 VGS = RDS ON = 30 VGS = V • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 • Ultra-thin package less than mm height when mounted to PCB • Ultra-low Qg x RDS ON figure-of-merit. • High power and current handling capability. • RoHS Compliant Bottom Index slot Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Steady State Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 203N FDZ203N 7’’ Ratings 20 ±12 20 to +150 67 11 1 Tape width 8mm Units V A W °C °C/W Quantity 3000 units 2008 Fairchild Semiconductor Corporation FDZ203N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V 20 14 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static |
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