FDY4001CZ

FDY4001CZ Datasheet


FDY4001CZ Complementary N & P-Channel MOSFET

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FDY4001CZ FDY4001CZ FDY4001CZ (pdf)
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FDY4001CZ Complementary N & P-Channel MOSFET

August 2006

FDY4001CZ

Complementary N & P-Channel

MOSFET

Q1 N-Channel - Max rDS on = at VGS = 4.5V, ID = 200mA - Max rDS on = at VGS = 2.5V, ID = 175mA - Max rDS on = at VGS = 1.8V, ID = 150mA

Q2 P-Channel
- Max rDS on = at VGS = -4.5V, ID = -150mA - Max rDS on = at VGS = -2.5V, ID = -125mA - Max rDS on = at VGS = -1.8V, ID = -100mA - ESD protection diode note 3 - RoHS Compliant

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power process to optimize the rDS ON VGS=2.5V and specify the rDS ON VGS = 1.8V.
- Level shifting
- Power Supply Converter Circuits
- Load/Power Switching Cell Phones, Pagers

S2 4 G2 5 D1 6
3 D2 2 G1 1 S1

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDS VGS ID

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation Steady State

TJ, TSTG Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 1b

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a Note 1b

Device Marking F

Device FDY4001CZ

Package SC89-6

Reel Size 7”
±12
-150
1000
-1000
-55 to 150

Units V mA
mW °C
200 °C/W

Tape Width 8mm

Quantity 3000units
2006 Fairchild Semiconductor Corporation

FDY4001CZ Complementary N & P-Channel MOSFET

Electrical Characteristics TJ = 25°C unlessotherwise noted

Parameter

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body Leakage

ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V

ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C

VDS = 16V, VDS =0V VDS = -16V, VDS =0V

VGS = ±12V, VDS = 0V VGS = ±4.5V, VDS = 0V VGS = ±8V, VDS = 0V

Q1 20 Q2 -20

Q1 Q2
14 -15
mV/°C

Q1 Q2
±10
±1 µA
More datasheets: HLMP-AL62-WZLZZ | HLMP-AL63-VZL00 | HLMP-AL63-VZK00 | HLMP-AL63-VZ0ZZ | HLMP-AL63-VZ0DD | HLMP-AL63-U00DD | HLMP-AL62-Y1KDD | HLMP-HL62-TX0DD | HLMP-AL63-VY0ZZ | 2743


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Datasheet ID: FDY4001CZ 514434