FDY4001CZ
FDY4001CZ Datasheet
FDY4001CZ Complementary N & P-Channel MOSFET
| Part | Datasheet |
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FDY4001CZ |
FDY4001CZ (pdf) |
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| FDY4001CZ Complementary N & P-Channel MOSFET August 2006 FDY4001CZ Complementary N & P-Channel MOSFET Q1 N-Channel - Max rDS on = at VGS = 4.5V, ID = 200mA - Max rDS on = at VGS = 2.5V, ID = 175mA - Max rDS on = at VGS = 1.8V, ID = 150mA Q2 P-Channel - Max rDS on = at VGS = -4.5V, ID = -150mA - Max rDS on = at VGS = -2.5V, ID = -125mA - Max rDS on = at VGS = -1.8V, ID = -100mA - ESD protection diode note 3 - RoHS Compliant This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power process to optimize the rDS ON VGS=2.5V and specify the rDS ON VGS = 1.8V. - Level shifting - Power Supply Converter Circuits - Load/Power Switching Cell Phones, Pagers S2 4 G2 5 D1 6 3 D2 2 G1 1 S1 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Steady State TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b Device Marking F Device FDY4001CZ Package SC89-6 Reel Size 7” ±12 -150 1000 -1000 -55 to 150 Units V mA mW °C 200 °C/W Tape Width 8mm Quantity 3000units 2006 Fairchild Semiconductor Corporation FDY4001CZ Complementary N & P-Channel MOSFET Electrical Characteristics TJ = 25°C unlessotherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C VDS = 16V, VDS =0V VDS = -16V, VDS =0V VGS = ±12V, VDS = 0V VGS = ±4.5V, VDS = 0V VGS = ±8V, VDS = 0V Q1 20 Q2 -20 Q1 Q2 14 -15 mV/°C Q1 Q2 ±10 ±1 µA |
| More datasheets: HLMP-AL62-WZLZZ | HLMP-AL63-VZL00 | HLMP-AL63-VZK00 | HLMP-AL63-VZ0ZZ | HLMP-AL63-VZ0DD | HLMP-AL63-U00DD | HLMP-AL62-Y1KDD | HLMP-HL62-TX0DD | HLMP-AL63-VY0ZZ | 2743 |
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