FDY3001NZ
FDY3001NZ Datasheet
FDY3001NZ Dual N-Channel 2.5V Specified MOSFET
| Part | Datasheet |
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FDY3001NZ |
FDY3001NZ (pdf) |
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| FDY3001NZ Dual N-Channel 2.5V Specified MOSFET January 2006 FDY3001NZ Dual N-Channel 2.5V Specified MOSFET This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON VGS = 2.5v. • Li-Ion Battery Pack • 200 mA, 20 V RDS ON = 5 VGS = V RDS ON = 7 VGS = V • ESD protection diode note 3 • RoHS Compliant Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Steady State Note 1a Note 1a Note 1b 1 TJ, TSTG Operating and Storage Junction Temperature Range Ratings 20 ± 12 200 1000 625 446 to +150 Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Ambient Note 1b 1 Package Marking and Ordering Information Device Marking Device Reel Size FDY3001NZ 7 ’’ 200 280 Tape width 8 mm 5 G2 4 S2 Units V mA mW °C °C/W Quantity 3000 units FDY3001NZ Dual N-Channel 2.5V Specified MOSFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown VGS = 0 V, ID = 250 µA Voltage Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V IGSS Leakage, VGS = ± 12 V, VDS = 0 V VGS = ± V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Forward Transconductance Dynamic Characteristics Ciss |
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