FDW9926A

FDW9926A Datasheet

FDW9926A

Part	Datasheet
FDW9926A	FDW9926A (pdf)

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FDW9926A July 2008 FDW9926A Dual N-Channel 2.5V Specified MOSFET This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 10V . • Battery protection • Load switch • Power management • A, 20 V. RDS ON = 32 VGS = V RDS ON = 45 VGS = V • Optimized for use in battery circuit applications • Extended VGSS range ±10V for battery applications • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Total Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 9926A FDW9926A 13’’ 2008 Fairchild Semiconductor Corporation 1 2 3 4 Ratings 20 ±12 30 to +150 125 208 Tape width 12mm 8 7 6 5 Units V A W °C °C/W Quantity 2500 units FDW9926A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V IGSS Leakage VGS = ±12 V, VDS = 0 V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient

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FDW9926A

July 2008

FDW9926A

Dual N-Channel 2.5V Specified MOSFET

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 10V .
• Battery protection
• Load switch
• Power management
• A, 20 V.

RDS ON = 32 VGS = V RDS ON = 45 VGS = V
• Optimized for use in battery circuit applications
• Extended VGSS range ±10V for battery applications
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package

G2 S2 D2

TSSOP-8

G1 S1 D1

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Total Power Dissipation

Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
9926A

FDW9926A
13’’
2008 Fairchild Semiconductor Corporation
1 2 3 4

Ratings
20 ±12 30 to +150
125 208

Tape width 12mm
8 7 6 5

Units

V A W °C
°C/W

Quantity 2500 units

FDW9926A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V

IGSS

Leakage

VGS = ±12 V, VDS = 0 V
mV/°C
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDW9926A 514430