FDW264P
FDW264P Datasheet
FDW264P
| Part | Datasheet |
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FDW264P |
FDW264P (pdf) |
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| FDW264P November 2003 FDW264P P-Channel 2.5V Specified MOSFET This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Load switch • Motor drive • DC/DC conversion • Power management • A, V. RDS ON = VGS = V RDS ON = VGS = V • Extended VGSS range ±12V for battery applications • Low gate charge • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Ratings ± 12 to +150 96 208 Units °C/W Package Marking and Ordering Information Device Marking Device Reel Size 264P FDW264P 13’’ Tape width 16mm Quantity 3000 units Fairchild Semiconductor Corporation FDW264P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = µA Breakdown Voltage Temperature Coefficient ID = µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = V, VGS = 0 V IGSS Leakage VGS = ±12 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static ID on Drain Current Forward Transconductance VDS = VGS, ID = µA ID = µA, Referenced to 25°C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A, TJ= 125°C VGS = V, VDS = V VDS = V, ID = A Dynamic Characteristics Ciss |
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