FDW258P
FDW258P Datasheet
FDW258P
| Part | Datasheet |
|---|---|
FDW258P |
FDW258P (pdf) |
| PDF Datasheet Preview |
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| FDW258P July 2008 FDW258P P-Channel 1.8V Specified MOSFET This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 1.8V . • Load switch • Motor drive • DC/DC conversion • Power management • A, V. RDS ON = 11 VGS = V RDS ON = 14 VGS = V RDS ON = 20 VGS = V • Rds ratings for use with V logic • Low gate charge • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Ratings ±8 to +150 87 114 Units °C/W Package Marking and Ordering Information Device Marking Device Reel Size 258P FDW258P 13’’ Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDW258P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 8 V, VGS = V. VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance VDS = VGS, ID = µA |
| More datasheets: 191-2801-140 | 191-2801-110 | 191-2801-109 | 191-2801-124 | 191-2801-125 | 191-2801-137 | 191-2801-136 | CP-AD-515 | PI3PD22919GBEX | 2621 |
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