FDW256P

FDW256P Datasheet

FDW256P

Part	Datasheet
FDW256P	FDW256P (pdf)

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FDW256P July 2008 FDW256P 30V P-Channel MOSFET This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V . • Battery protection • DC/DC conversion • Power management • Load switch • A, V RDS ON = VGS = V RDS ON = 20 VGS = V • Extended VGSS range ±25V for battery applications • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Note 1 Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 256P FDW256P 13’’ Ratings ± 25 to +150 96 208 Tape width 16mm Units °C/W Quantity 2500 units 2008 Fairc hild Semiconductor Corporation FDW256P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Breakdown Voltage VGS = 0 V, ID = µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = µA, Referenced to 25°C VDS = V, VGS = 0 V mV/°C IGSSF Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 V GS th Gate Threshold Voltage GS th RDS on Gate Threshold Voltage Temperature Coefficient

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FDW256P

July 2008

FDW256P
30V P-Channel MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V .
• Battery protection
• DC/DC conversion
• Power management
• Load switch
• A, V RDS ON = VGS = V RDS ON = 20 VGS = V
• Extended VGSS range ±25V for battery applications
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS V GSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation

Note 1

Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
256P

FDW256P
13’’

Ratings
± 25 to +150
96 208

Tape width 16mm

Units
°C/W

Quantity 2500 units
2008 Fairc hild Semiconductor Corporation

FDW256P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BV DSS

Breakdown Voltage VGS = 0 V, ID = µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = µA, Referenced to 25°C VDS = V, VGS = 0 V
mV/°C

IGSSF

Leakage, Forward

VGS = 25 V, VDS = 0 V
100 nA

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

V GS th

Gate Threshold Voltage

GS th

RDS on

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDW256P 514423