FDW2520C

FDW2520C Datasheet

FDW2520C

Part	Datasheet
FDW2520C	FDW2520C (pdf)

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FDW2520C July 2008 FDW2520C Complementary MOSFET This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • DC/DC conversion • Power management • Load switch • Q1 N-Channel 6 A, 20 V. RDS ON = 18 VGS = V RDS ON = 28 VGS = V • Q2 P-Channel 20 V. RDS ON = 35 VGS = V RDS ON = 57 VGS = V • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation Note 1a Note 1a Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2520C FDW2520C 13’’ ±12 ±12 to +150 Units °C/W Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDW2520C Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown VGS = 0 V, ID = 250 µA Voltage VGS = 0 V, ID = µA Breakdown Voltage ID = 250 µA, Referenced to 25°C Temperature Coefficient ID = µA, Referenced to 25°C IDSS Zero Gate Voltage Drain VDS = 16 V, VGS = 0 V Current VDS = V, VGS = 0 V IGSS Gate-Body Leakage VGS = +12 V, VDS = 0 V VGS = +12 V, VDS = 0 V On Characteristics Note 2 VGS th RDS on

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FDW2520C

July 2008

FDW2520C

Complementary MOSFET

This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
• DC/DC conversion
• Power management
• Load switch
• Q1 N-Channel
6 A, 20 V.

RDS ON = 18 VGS = V RDS ON = 28 VGS = V
• Q2 P-Channel 20 V. RDS ON = 35 VGS = V RDS ON = 57 VGS = V
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package

G2 S2 D2

TSSOP-8

G1 S1 D1

Pin 1

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID

TJ, TSTG

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation

Note 1a

Note 1a Note 1b

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2520C

FDW2520C
13’’
±12
±12
to +150

Units
°C/W

Tape width 12mm

Quantity 2500 units

Fairchild Semiconductor Corporation

FDW2520C

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown VGS = 0 V, ID = 250 µA

Voltage

VGS = 0 V, ID = µA

Breakdown Voltage

ID = 250 µA, Referenced to 25°C

Temperature Coefficient

ID = µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain

VDS = 16 V, VGS = 0 V

Current

VDS = V, VGS = 0 V

IGSS

Gate-Body Leakage

VGS = +12 V, VDS = 0 V

VGS = +12 V, VDS = 0 V

On Characteristics Note 2

VGS th RDS on

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Datasheet ID: FDW2520C 514418