FDW2510NZ
FDW2510NZ Datasheet
FDW2510NZ
| Part | Datasheet |
|---|---|
FDW2510NZ |
FDW2510NZ (pdf) |
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| FDW2510NZ April 2004 FDW2510NZ Dual N-Channel 2.5V Specified MOSFET This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Li-Ion Battery Pack • A, 20 V RDS ON = 24 VGS = V RDS ON = 32 VGS = V • Extended VGSS range ±12V for battery applications • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2510NZ FDW2510NZ 13’’ Ratings 20 ±12 30 to +150 77 114 Tape width 12mm Units °C/W °C/W Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDW2510NZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss |
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