FDW2507NZ

FDW2507NZ Datasheet

FDW2507NZ

Part	Datasheet
FDW2507NZ	FDW2507NZ (pdf)

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FDW2507NZ March 2003 FDW2507NZ Common Drain N-Channel 2.5V specified MOSFET This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. • Li-Ion Battery Pack • A, 20 V RDS ON = 19 VGS = V RDS ON = 23 VGS = V • Isolated source and drain pins • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON VGS = V • Low profile TSSOP-8 package G1 S1 TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2507NZ FDW2507NZ 13’’ Ratings 20 ±12 30 to +150 77 114 Tape width 12mm Units °C/W °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDW2507NZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V mV/°C On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient

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FDW2507NZ

March 2003

FDW2507NZ

Common Drain N-Channel 2.5V specified MOSFET

This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.
• Li-Ion Battery Pack
• A, 20 V

RDS ON = 19 VGS = V RDS ON = 23 VGS = V
• Isolated source and drain pins
• ESD protection diode note 3
• High performance trench technology for extremely low RDS ON VGS = V
• Low profile TSSOP-8 package

G1 S1

TSSOP-8

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2507NZ

FDW2507NZ
13’’

Ratings
20 ±12 30 to +150
77 114

Tape width 12mm

Units
°C/W °C/W

Quantity 3000 units

Fairchild Semiconductor Corporation

FDW2507NZ

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 16 V, VGS = 12 V, VGS = V,

VGS = 0 V VDS = 0 V VDS = 0 V
mV/°C

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDW2507NZ 514410