FDW2507N

FDW2507N Datasheet

FDW2507N

Part	Datasheet
FDW2507N	FDW2507N (pdf)

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FDW2507N July 2008 FDW2507N Common Drain N-Channel 2.5V specified MOSFET This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. • Li-Ion Battery Pack • A, 20 V. RDS ON = 19 VGS = V RDS ON = 23 VGS = V • Isolated source and drain pins • High performance trench technology for extremely low RDS ON VGS = V • Low profile TSSOP-8 package TSSOP-8 G2 S2 G1 S1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2507N FDW2507N 13’’ 1 2 3 4 Ratings 20 ±12 30 to +150 77 114 Tape width 12mm 8 7 6 5 Units W °C °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDW2507N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V mV/°C 100 nA On Characteristics Note 2

PDF Datasheet Preview

FDW2507N

July 2008

FDW2507N

Common Drain N-Channel 2.5V specified MOSFET

This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.
• Li-Ion Battery Pack
• A, 20 V.

RDS ON = 19 VGS = V RDS ON = 23 VGS = V
• Isolated source and drain pins
• High performance trench technology for extremely low RDS ON VGS = V
• Low profile TSSOP-8 package

TSSOP-8

G2 S2 G1 S1

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2507N

FDW2507N
13’’
1 2 3 4

Ratings
20 ±12 30 to +150
77 114

Tape width 12mm
8 7 6 5

Units

W °C
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDW2507N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 16 V, VGS = 12 V, VGS = V,

VGS = 0 V VDS = 0 V VDS = 0 V
mV/°C
100 nA

On Characteristics Note 2

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDW2507N Datasheet file may be downloaded here without warranties.

Datasheet ID: FDW2507N 514409