FDW2504P
FDW2504P Datasheet
FDW2504P
| Part | Datasheet |
|---|---|
FDW2504P |
FDW2504P (pdf) |
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| FDW2504P July 2008 FDW2504P Dual P-Channel 2.5V Specified MOSFET This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Load switch • Motor drive • DC/DC conversion • Power management • A, V, RDS ON = VGS = V RDS ON = VGS = V • Extended VGSS range ±12V for battery applications • Low gate charge • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 Power Dissipation Note 1a TJ, TSTG Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Ratings ±12 to +150 125 208 Units °C/W Package Marking and Ordering Information Device Marking Device Reel Size 2504P FDW2504P 13’’ Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDW2504P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance VDS = VGS, ID = µA ID = µA, Referenced to 25°C mV/°C |
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