FDT461N

FDT461N Datasheet

FDT461N

Part	Datasheet
FDT461N	FDT461N (pdf)

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FDT461N FDT461N N-Channel Logic Level MOSFET 100V, 0.4A, • rDS ON = Typ. , VGS = 4.5V, ID = 0.4A • Qg tot = 2.36nC Typ. , VGS = 10V • Low Miller Charge • Low QRR Body Diode • Servo Motor Load Control • DC-DC converters April 2004 DRAIN FLANGE GATE DRAIN SOURCE SOT-223 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TA = 25oC, VGS = 10V, 110oC/W Continuous TA = 25oC, VGS = 4.5V, 110oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Ambient SOT-223, Pad area = in2 Thermal Resistance Junction to Ambient SOT-223, Pad area = in2 Thermal Resistance Junction to Ambient SOT-223, Pad area = in2 Ratings 100 ±20 Figure 4 9 -55 to 150 110 128 147 Units V A mJ W mW/oC oC/W oC/W oC/W Package Marking and Ordering Information Device Marking 461 Device FDT461N Package SOT-223 Reel Size 13” Tape Width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDT461N Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 80V VGS = 0V TC = 125oC VGS = ±20V ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 0.54A, VGS = 10V ID = 0.4A, VGS = 4.5V ID = 0.54A, VGS = 10V, TJ = 150oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg 4.5 Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 4.5V VGS = 0V to 1V VDD = 50V ID = 0.54A Ig = 1.0mA Switching Characteristics VGS = 10V tON td ON Turn-On Time Turn-On Delay Time Rise Time td OFF

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FDT461N

FDT461N

N-Channel Logic Level MOSFET 100V, 0.4A,
• rDS ON = Typ. , VGS = 4.5V, ID = 0.4A
• Qg tot = 2.36nC Typ. , VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Servo Motor Load Control
• DC-DC converters

April 2004

DRAIN FLANGE

GATE DRAIN

SOURCE

SOT-223

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD TJ, TSTG

Parameter Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TA = 25oC, VGS = 10V, 110oC/W Continuous TA = 25oC, VGS = 4.5V, 110oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation Derate above 25oC

Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Ambient SOT-223, Pad area = in2 Thermal Resistance Junction to Ambient SOT-223, Pad area = in2 Thermal Resistance Junction to Ambient SOT-223, Pad area = in2

Ratings 100 ±20

Figure 4 9 -55 to 150
110 128 147

Units V

A mJ W mW/oC
oC/W oC/W oC/W
Package Marking and Ordering Information

Device Marking 461

Device FDT461N

Package SOT-223

Reel Size 13”

Tape Width 12mm

Quantity 2500 units
2004 Fairchild Semiconductor Corporation

FDT461N

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 80V VGS = 0V

TC = 125oC

VGS = ±20V
±100 nA

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 0.54A, VGS = 10V ID = 0.4A, VGS = 4.5V ID = 0.54A, VGS = 10V, TJ = 150oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg 4.5 Qg TH Qgs Qgs2 Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 10V VGS = 0V to 4.5V VGS = 0V to 1V

VDD = 50V ID = 0.54A Ig = 1.0mA

Switching Characteristics VGS = 10V
tON td ON

Turn-On Time Turn-On Delay Time

Rise Time
td OFF

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Datasheet ID: FDT461N 514392