FDS8962C
FDS8962C Datasheet
FDS8962C Dual N & P-Channel MOSFET
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FDS8962C |
FDS8962C (pdf) |
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| FDS8962C Dual N & P-Channel MOSFET June 2006 FDS8962C Dual N & P-Channel MOSFET • Q1 N-Channel 7.0A, 30V RDS on = VGS = 10V RDS on = VGS = 4.5V • Q2 P-Channel -5A, -30V RDS on = VGS = -10V RDS on = VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package These dual N- and P-Channel enhancement mode power effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D2 D1 SO-8 Pin 1 G2 S2 S1G1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 ±20 ±20 -55 to +150 78 40 Package Marking and Ordering Information Device Marking FDS8962C Device FDS8962C Reel Size 13” Tape width 12mm Units °C °C/W °C/W Quantity 2500 units 2005 Fairchild Semiconductor Corporation FDS8962C Dual N & P-Channel MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Type Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = -20 V, VDS = 0 V On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Static Drain-Source On-Resistance ID on On-State Drain Current Forward Transconductance |
| More datasheets: PM125S-180M-RC | PM125S-151M-RC | PM125S-121M-RC | PM125S-120M-RC | PM125S-470M-RC | PM125S-220M | PM125S-331M | AS5040-ASSU | 10824F | 06AB2D |
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