FDS7788

FDS7788 Datasheet

FDS7788

Part	Datasheet
FDS7788	FDS7788 (pdf)

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FDS7788 August 2008 FDS7788 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • DC/DC converter • Load switch • Motor drives • 18 A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V • Low gate charge • Fast switching speed • High power and current handling capability • High performance trench technology for extremely low RDS ON • RoHS Compliant SO-8 S SSG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Drain-Source Avalanche Energy Note 3 Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7788 FDS7788 13’’ Ratings 30 ±20 18 50 661 to +150 50 30 Tape width 12mm Units °C/W °C/W Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDS7788 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static

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FDS7788

August 2008

FDS7788
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• DC/DC converter
• Load switch
• Motor drives
• 18 A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V
• Low gate charge
• Fast switching speed
• High power and current handling capability
• High performance trench technology for extremely low RDS ON
• RoHS Compliant

SO-8

S SSG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS

VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Drain-Source Avalanche Energy

Note 3

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7788

FDS7788
13’’

Ratings
30 ±20 18 50 661 to +150
50 30

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units
2008 Fairchild Semiconductor Corporation

FDS7788

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C
mV/°C

IDSS

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = 20 V, VDS = 0 V
100 nA

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

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Datasheet ID: FDS7788 514376