FDS7296N3

FDS7296N3 Datasheet

FDS7296N3

Part	Datasheet
FDS7296N3	FDS7296N3 (pdf)

PDF Datasheet Preview
FDS7296N3 September 2004 FDS7296N3 30V N-Channel MOSFET This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS ON and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for high and low side switch applications in Point of Load converters. • Secondary side Synchronous rectifier • Synchronous Buck VRM and POL Converters • 15 A, 30 V RDS ON = 8 VGS = 10 V RDS ON = 11 VGS = V • High performance trench technology for extremely low RDS ON • Optimized for low Qgd to enable fast switching and reduced CdV/dt gate coupling. • SO-8 FLMP for enhanced thermal performance in an industry-standard package outline. NDCDNCDNCDNC FBLMotPtoSmOl-e8ss SO-8 Pin 1SO-8 SS SSGG Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7296N3 FDS7296N3 13’’ Fairchild Semiconductor Corporation Ratings 30 ±20 15 60 to +150 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS7296N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings WDSS Drain-Source Avalanche Energy Drain-Source Avalanche Current Single Pulse, VDD = 27 V, ID=15 A Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient

PDF Datasheet Preview

FDS7296N3

September 2004

FDS7296N3
30V N-Channel MOSFET

This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS ON and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for high and low side switch applications in Point of Load converters.
• Secondary side Synchronous rectifier
• Synchronous Buck VRM and POL Converters
• 15 A, 30 V

RDS ON = 8 VGS = 10 V RDS ON = 11 VGS = V
• High performance trench technology for extremely low RDS ON
• Optimized for low Qgd to enable fast switching and reduced CdV/dt gate coupling.
• SO-8 FLMP for enhanced thermal performance in an industry-standard package outline.

NDCDNCDNCDNC

FBLMotPtoSmOl-e8ss SO-8 Pin 1SO-8

SS SSGG

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7296N3

FDS7296N3
13’’

Fairchild Semiconductor Corporation

Ratings
30 ±20 15 60 to +150

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

FDS7296N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings

WDSS

Drain-Source Avalanche Energy

Drain-Source Avalanche Current

Single Pulse, VDD = 27 V, ID=15 A

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDS7296N3 Datasheet file may be downloaded here without warranties.

Datasheet ID: FDS7296N3 514372