FDS7288N3
FDS7288N3 Datasheet
FDS7288N3
| Part | Datasheet |
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FDS7288N3 |
FDS7288N3 (pdf) |
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| FDS7288N3 February 2004 FDS7288N3 30V N-Channel MOSFET This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS ON and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters. • Secondary side Synchronous rectifier • Synchronous Buck VRM and POL Converters • A, 30 V RDS ON = VGS = 10 V RDS ON = VGS = V • High performance trench technology for extremely low RDS ON • Low Qg and Rg for fast switching • SO-8 FLMP for enhanced thermal performance in an industry-standard package outline. Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7288N3 FDS7288N3 13’’ Fairchild Semiconductor Corporation Ratings 30 ±20 60 to +150 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS7288N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C |
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