FDS7064N7
FDS7064N7 Datasheet
FDS7064N7
| Part | Datasheet |
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FDS7064N7 |
FDS7064N7 (pdf) |
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| FDS7064N7 February 2004 FDS7064N7 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 30 V RDS ON = VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching • FLMP SO-8 package Enhanced thermal performance in industry-standard package size DS D DS Bottomless SO-8 Pin 1 SO-8 SS GG Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDS7064N7 FDS7064N7 13’’ Ratings 30 ± 12 60 to +150 Tape width 12mm Units W °C °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS7064N7 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = V , VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance |
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