FDS6894A
FDS6894A Datasheet
FDS6894A
| Part | Datasheet |
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FDS6894A |
FDS6894A (pdf) |
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| FDS6894A October 2001 FDS6894A Dual N-Channel Logic Level PWM Optimized MOSFET These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • 8 A, 20 V. RDS ON = 17 VGS = V RDS ON = 20 VGS = V RDS ON = 30 VGS = V • Low gate charge 17 nC • High performance trench technology for extremely low RDS ON • High power and current handling capability DD1 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6894A FDS6894A 13’’ Ratings 20 ±8 32 2 1 to +150 78 40 Tape width 12mm Units °C/W °C/W Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS6894A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSSF IGSSR Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55°C Leakage, Forward VGS = 8 V, VDS = 0 V VGS = 8 V, VDS = 0 V mV/°C On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static ID on |
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