FDS6688AS

FDS6688AS Datasheet

FDS6688AS 30V N-Channel SyncFET

Part	Datasheet
FDS6688AS	FDS6688AS (pdf)

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FDS6688AS 30V N-Channel SyncFET November 2008 FDS6688AS 30V N-Channel SyncFET The FDS6688AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS6688AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • DC/DC converter • Low side notebook • A, 30 V. RDS ON max= VGS = 10 V RDS ON max= VGS = V • Includes SyncFET Schottky body diode • Low gate charge 45nC typical • High performance trench technology for extremely low RDS ON and fast switching • High power and current handling capability • RoHS Compliant SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6688AS FDS6688AS 13’’ Ratings 30 ±20 50 1 to +150 50 25 Tape width 12mm Units °C/W Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDS6688AS 30V N-Channel SyncFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage VGS = 0 V, ID = 1 mA Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance VDS = VGS,

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FDS6688AS 30V N-Channel SyncFET

November 2008

FDS6688AS
30V N-Channel SyncFET

The FDS6688AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS6688AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
• DC/DC converter
• Low side notebook
• A, 30 V. RDS ON max= VGS = 10 V RDS ON max= VGS = V
• Includes SyncFET Schottky body diode
• Low gate charge 45nC typical
• High performance trench technology for extremely low RDS ON and fast switching
• High power and current handling capability
• RoHS Compliant

SO-8

G SS S

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6688AS

FDS6688AS
13’’

Ratings
30 ±20 50
1 to +150
50 25

Tape width 12mm

Units
°C/W

Quantity 2500 units
2008 Fairchild Semiconductor Corporation

FDS6688AS 30V N-Channel SyncFET

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage VGS = 0 V, ID = 1 mA

Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C Coefficient

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

IGSS

Leakage

VGS = ±20 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

VDS = VGS,

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Datasheet ID: FDS6688AS 514340