FDS6688

FDS6688 Datasheet

FDS6688

Part	Datasheet
FDS6688	FDS6688 (pdf)

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FDS6688 January 2004 FDS6688 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • DC/DC converter • 16 A, 30 V. RDS ON = 6 VGS = 10 V RDS ON = 7 VGS = V • Ultra-low gate charge 40 nC typical • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 Pin 1 SO-8 SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1c Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6688 FDS6688 13’’ Ratings 30 ±20 16 50 to +175 50 125 25 Tape width 12mm Units °C/W °C/W °C/W Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS6688 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current

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FDS6688

January 2004

FDS6688
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• DC/DC converter
• 16 A, 30 V.

RDS ON = 6 VGS = 10 V RDS ON = 7 VGS = V
• Ultra-low gate charge 40 nC typical
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SO-8

Pin 1 SO-8 SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1c Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6688

FDS6688
13’’

Ratings
30 ±20 16 50 to +175
50 125 25

Tape width 12mm

Units
°C/W °C/W °C/W

Quantity 2500 units
2004 Fairchild Semiconductor Corporation

FDS6688

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C
mV/°C

IDSS

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

IGSS

Leakage

VGS = ±20 V, VDS = 0 V
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

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Datasheet ID: FDS6688 514339