FDS6685

FDS6685 Datasheet

FDS6685

Part	Datasheet
FDS6685	FDS6685 (pdf)

PDF Datasheet Preview
FDS6685 October 2001 FDS6685 30V P-Channel MOSFET This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V . • Power management • Load switch • Battery protection • A, V RDS ON = 20 VGS = V RDS ON = 35 VGS = V • Low gate charge 17nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 Pin 1SO-8 SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b TJ, TSTG Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1c Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6685 FDS6685 13’’ 2001 Fairchild Semiconductor Corporation Ratings ±25 1 to +175 50 125 25 Tape width 12mm Units °C/W °C/W °C/W Quantity 2500 units FDS6685 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Breakdown Voltage VGS = 0 V, ID = µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = µA, Referenced to 25°C VDS = V, VGS = 0 V mV/°C IGSSF Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 V GS th Gate Threshold Voltage GS th Gate Threshold Voltage Temperature Coefficient

PDF Datasheet Preview

FDS6685

October 2001

FDS6685
30V P-Channel MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V .
• Power management
• Load switch
• Battery protection
• A, V

RDS ON = 20 VGS = V RDS ON = 35 VGS = V
• Low gate charge 17nC typical
• Fast switching speed
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SO-8

Pin 1SO-8 SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS V GSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

TJ, TSTG

Note 1c

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1c Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6685

FDS6685
13’’
2001 Fairchild Semiconductor Corporation

Ratings
±25
1 to +175
50 125 25

Tape width 12mm

Units
°C/W °C/W °C/W

Quantity 2500 units

FDS6685

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BV DSS

Breakdown Voltage VGS = 0 V, ID = µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = µA, Referenced to 25°C VDS = V, VGS = 0 V
mV/°C

IGSSF

Leakage, Forward

VGS = 25 V, VDS = 0 V
100 nA

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

V GS th

Gate Threshold Voltage

GS th

Gate Threshold Voltage Temperature Coefficient

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDS6685 Datasheet file may be downloaded here without warranties.

Datasheet ID: FDS6685 514338