FDS6299S
FDS6299S Datasheet
FDS6299S 30V N-Channel SyncFET
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FDS6299S |
FDS6299S (pdf) |
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| FDS6299S 30V N-Channel SyncFET November 2007 FDS6299S 30V N-Channel SyncFET The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. • Synchronous Rectifier for DC/DC Converters • Notebook Vcore low side switch • Point of load low side switch • 21 A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V • Includes SyncFET Schottky body diode • High performance trench technology for extremely low RDS ON and fast switching • High power and current handling capability • 100% RG Gate Resistance tested • Termination is Lead-free and RoHS Compliant G SS SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6299S FDS6299S 13’’ 5 6 7 8 Ratings 30 ±20 21 105 1 to +150 50 25 Tape width 12mm 4 3 2 1 Units °C/W Quantity 2500 units 2007 Fairchild Semiconductor Corporation FDS6299S 30V N-Channel SyncFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V mV/°C 500 µA ±100 nA On Characteristics VGS th RDS on Gate Threshold Voltage |
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