FDS6064N3

FDS6064N3 Datasheet

FDS6064N3

Part	Datasheet
FDS6064N3	FDS6064N3 (pdf)

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FDS6064N3 May 2003 FDS6064N3 20V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDS6064N3 FDS6064N3 13’’ Ratings 20 ±8 23 60 to +150 Tape width 12mm Units V A W °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS6064N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V IGSSF Leakage, Forward VGS = 8 V, VDS = 0 V IGSSR VGS = V , VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage

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FDS6064N3

May 2003

FDS6064N3
20V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• FLMP SO-8 package Enhanced thermal
performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6064N3

FDS6064N3
13’’

Ratings
20 ±8 23 60 to +150

Tape width 12mm

Units

V A W °C
°C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS6064N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V,

ID = 250 µA

Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient

IDSS

Zero Gate Voltage Drain Current VDS = 16 V,

VGS = 0 V

IGSSF

Leakage, Forward

VGS = 8 V,

VDS = 0 V

IGSSR

VGS = V , VDS = 0 V
mV/°C
100 nA

On Characteristics

Note 2

VGS th

Gate Threshold Voltage

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Datasheet ID: FDS6064N3 514323