FDS4895C
Part | Datasheet |
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FDS4895C | FDS4895C (pdf) |
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FDS4895C June 2005 FDS4895C Dual N & P-Channel MOSFET These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application • Motor Control • DC/DC conversion • Q1 N-Channel 5.5A, 40V RDS on = VGS = 10V RDS on = VGS = 7V • Q2 P-Channel RDS on = VGS = RDS on = VGS = • High power and handling capability in a widely used surface mount package DD2DD2 DD1 SO-8 Pin 1 SO-8 Absolute Maximum Ratings TA = 25°C unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Note 1a - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS4895C FDS4895C 13” ±20 ±20 to +150 78 40 Units °C/W Tape width 12mm Quantity 2500 units 2005 Fairchild Semiconductor Corporation FDS4895C Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA VGS = 0 V, ID = µA ID = 250 µA, Referenced to 25°C ID = µA, Referenced to 25°C VDS = 32 V, VGS = 0 V VDS = V, VGS = 0 V VGS = 20 V, |
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