FDS4895C

FDS4895C Datasheet


FDS4895C

Part Datasheet
FDS4895C FDS4895C FDS4895C (pdf)
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FDS4895C

June 2005

FDS4895C

Dual N & P-Channel MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Application
• Motor Control
• DC/DC conversion
• Q1 N-Channel 5.5A, 40V RDS on = VGS = 10V RDS on = VGS = 7V
• Q2 P-Channel RDS on = VGS = RDS on = VGS =
• High power and handling capability in a widely used surface mount package

DD2DD2 DD1

SO-8

Pin 1 SO-8

Absolute Maximum Ratings TA = 25°C unless otherwise noted

VDSS VGSS ID PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Note 1a
- Pulsed

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Note 1a Note 1b

Note 1c

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4895C

FDS4895C
13”
±20
±20
to +150
78 40

Units
°C/W

Tape width 12mm

Quantity 2500 units
2005 Fairchild Semiconductor Corporation

FDS4895C

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

VGS = 0 V,

ID = µA

ID = 250 µA, Referenced to 25°C

ID = µA, Referenced to 25°C

VDS = 32 V,

VGS = 0 V

VDS = V, VGS = 0 V

VGS = 20 V,
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Datasheet ID: FDS4895C 514317