FDS4435A
FDS4435A Datasheet
FDS4435A
| Part | Datasheet |
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FDS4435A |
FDS4435A (pdf) |
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| FDS4435A October 2001 FDS4435A P-Channel Logic Level MOSFET This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications load switching and power management, battery charging circuits, and DC/DC conversion. -9 A, -30 V. RDS ON = W VGS = -10 V RDS ON = W VGS = V Low gate charge 21nC typical . High performance trench technology for extremely low RDS ON . High power and current handling capability. SS SO-8 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c Operating and Storage Junction Temperature Range Ratings -30 ± 20 -9 -50 1 -55 to +150 Units Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 °C/W °C/W Package Marking and Ordering Information Device Marking Device Reel Size FDS4435A FDS4435A 13’’ Tape Width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDS4435A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 µA,Referenced to 25°C VDS = -24 V, VGS = 0 mV/°C IGSSF TJ = 125°C Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V IGSSR -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 µA ID = -250 µA,Referenced to 25°C mV/°C VGS = -10 V, ID = -9 A ID on gFS On-State Drain Current Forward Transconductance |
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