FDS4435A

FDS4435A Datasheet


FDS4435A

Part Datasheet
FDS4435A FDS4435A FDS4435A (pdf)
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FDS4435A

October 2001

FDS4435A

P-Channel Logic Level MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications load switching and power management, battery charging circuits, and DC/DC conversion.
-9 A, -30 V. RDS ON = W VGS = -10 V

RDS ON = W VGS = V

Low gate charge 21nC typical . High performance trench technology for extremely
low RDS ON .

High power and current handling capability.

SS SO-8 S

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID PD

TJ, Tstg

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous - Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a Note 1b

Note 1c

Operating and Storage Junction Temperature Range

Ratings
-30 ± 20
-9 -50 1 -55 to +150

Units

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a

Thermal Resistance, Junction-to-Case

Note 1
°C/W °C/W
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4435A

FDS4435A
13’’

Tape Width 12mm

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS4435A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = -250 µA,Referenced to 25°C VDS = -24 V, VGS = 0
mV/°C

IGSSF

TJ = 125°C Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V

IGSSR
-100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

VDS = VGS, ID = -250 µA

ID = -250 µA,Referenced to 25°C
mV/°C

VGS = -10 V, ID = -9 A

ID on gFS

On-State Drain Current Forward Transconductance
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Datasheet ID: FDS4435A 514311