FDS3912
FDS3912 Datasheet
FDS3912
| Part | Datasheet |
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FDS3912 |
FDS3912 (pdf) |
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| FDS3912 October 2001 FDS3912 100V Dual N-Channel MOSFET These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. • 3 A, 100 V. RDS ON = 125 VGS = 10 V RDS ON = 135 VGS = 6 V • Fast switching speed • Low gate charge 14 nC typ • High performance trench technology for extremely low RDS ON • High power and current handling capability Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS3912 FDS3912 13’’ 2001 Fairchild Semiconductor Corporation Ratings 100 ±20 3 20 2 to +175 78 40 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS3912 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 W DSS Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 3 A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 80 V, VGS = 20 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage |
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