FDS3812
FDS3812 Datasheet
FDS3812
| Part | Datasheet |
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FDS3812 |
FDS3812 (pdf) |
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| FDS3812 May 2001 FDS3812 80V N-Channel Dual MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. A, 80 V. RDS ON = 74 VGS = 10 V RDS ON = 84 VGS = 6 V • Fast switching speed • Low gate charge 13nC typ • High performance trench technology for extremely low RDS ON • High power and current handling capability D1 D2 SO-8 G1 S1 G2 S2 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS3812 FDS3812 13’’ Ratings 80 ± 20 2 to +175 78 40 Tape width 12mm 4 3 2 1 Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS3812 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Single Pulse Drain-Source Avalanche Energy VDD = 40 V, Maximum Drain-Source Avalanche Current ID = A Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C |
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