FDS3670

FDS3670 Datasheet

FDS3670

Part	Datasheet
FDS3670	FDS3670 (pdf)

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FDS3670 January 2000 PRELIMINARY FDS3670 100V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. • A, 100 V. RDS ON = VGS = 10 V RDS ON = VGS = 6 V. • Low gate charge 57 nC typical . • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability. SO-8 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS3670 FDS3670 13’’ Fairchild Semiconductor Corporation 5 6 7 8 Ratings 100 ±20 50 -55 to +150 50 25 Tape width 12mm 4 3 2 1 Units °C/W °C/W Quantity 2500 units FDS3670 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance Dynamic Characteristics Ciss

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FDS3670

January 2000 PRELIMINARY

FDS3670
100V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.
• A, 100 V. RDS ON = VGS = 10 V RDS ON = VGS = 6 V.
• Low gate charge 57 nC typical .
• Fast switching speed
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability.

SO-8

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS3670

FDS3670
13’’

Fairchild Semiconductor Corporation
5 6 7 8

Ratings
100 ±20 50 -55 to +150
50 25

Tape width 12mm
4 3 2 1

Units
°C/W °C/W

Quantity 2500 units

FDS3670

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF IGSSR

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

Dynamic Characteristics

Ciss

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Datasheet ID: FDS3670 514297