FDR844P

FDR844P Datasheet

FDR844P

Part	Datasheet
FDR844P	FDR844P (pdf)

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FDR844P October 2001 FDR844P P-Channel 1.8V Specified MOSFET This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • Power management • Load switch • Battery protection • A, V. RDS ON = 11 RDS ON = 14 RDS ON = 20 • Fast switching speed VGS = V VGS = V = V • High performance trench technology for extremely low RDS ON • High power and current handling capability SuperSOT -8 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size .844P FDR844P 13’’ Ratings ±8 -55 to +150 70 20 Tape width 12mm Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDR844P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = VGS = 8 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on

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FDR844P

October 2001

FDR844P

P-Channel 1.8V Specified MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
• Power management
• Load switch
• Battery protection
• A, V. RDS ON = 11 RDS ON = 14 RDS ON = 20
• Fast switching speed

VGS = V VGS = V = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SuperSOT -8

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
.844P

FDR844P
13’’

Ratings
±8 -55 to +150
70 20

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDR844P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = µA

ID = µA, Referenced to 25°C

VDS = VGS = 8 V, VGS = V,

VGS = 0 V VDS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

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Datasheet ID: FDR844P 514283