FDR838P
FDR838P Datasheet
FDR838P
| Part | Datasheet |
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FDR838P |
FDR838P (pdf) |
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| FDR838P March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Load switch • Motor driving • Power Management • -8 A, -20 V. RDS ON = VGS = V RDS ON = VGS = V • Low gate charge 30nC typical . • Fast switching speed. • High performance trench technology for extremely low RDS ON . • Small footprint 38% smaller than a standard SO-8 low profile package 1 mm thick power handling capability similar to SO-8. SuperSOT -8 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Outlines and Ordering Information Device Marking Device Reel Size .838P FDR838P 13’’ Ratings -20 ±8 -8 -50 -55 to +150 70 20 Tape Width 12mm Units °C/W °C/W Quantity 3000 units 1999 Fairchild Semiconductor Corporation FDR838P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID= -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V IGSSR mV/°C 100 nA -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance |
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