FDR4420A

FDR4420A Datasheet

FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET

Part	Datasheet
FDR4420A	FDR4420A (pdf)

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June 1998 FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET The SuperSOT-8 family of N-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where small package size is required without compromising power handling and fast switching. Features 11 A, 30 V. RDS ON = VGS = 10 V, RDS ON = VGS = V. Fast switching speed. Low gate charge. Small footprint 38% smaller than a standard SO-8. Low profile package 1mm thick . Power handling capability similar to SO-8. SOT-23 SuperSOTTM-6 SuperSOTTM-8 4420A pin 1 SuperSOT TM-8 SO-8 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Draint Current - Continuous - Pulsed Note 1a Maximum Power Dissipation Note 1a Note 1b Note 1c TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 1998 Fairchild Semiconductor Corporation SOT-223 5 6 7 8 FDR4420A 30 ±20 11 40 1 -55 to 150 70 20 SOIC-16 4 3 2 1 Units V A °C °C/W °C/W Electrical Characteristics TA = 25OC unless otherwise noted

PDF Datasheet Preview

June 1998

FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET

The SuperSOT-8 family of N-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

These MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where small package size is required without compromising power handling and fast switching.

Features 11 A, 30 V. RDS ON = VGS = 10 V, RDS ON = VGS = V. Fast switching speed. Low gate charge. Small footprint 38% smaller than a standard SO-8.

Low profile package 1mm thick .

Power handling capability similar to SO-8.

SOT-23

SuperSOTTM-6

SuperSOTTM-8
4420A
pin 1

SuperSOT TM-8

SO-8

Absolute Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Draint Current - Continuous
- Pulsed

Note 1a

Maximum Power Dissipation

Note 1a Note 1b Note 1c

TJ,TSTG Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Case Note 1
1998 Fairchild Semiconductor Corporation

SOT-223
5 6 7 8

FDR4420A 30 ±20 11 40 1
-55 to 150
70 20

SOIC-16
4 3 2 1

Units V A
°C °C/W °C/W

Electrical Characteristics TA = 25OC unless otherwise noted

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Datasheet ID: FDR4420A 514274