FDQ7698S

FDQ7698S Datasheet

FDQ7698S

Part	Datasheet
FDQ7698S	FDQ7698S (pdf)

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FDQ7698S August 2003 FDQ7698S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package The FDQ7698S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the low-side switch Q2 is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology. • Q2 15 A, 30V. RDS on = VGS = 10V RDS on = 9 VGS = 4.5V • Q1 12A, 30V. RDS on = 12 VGS = 10V RDS on = 16 VGS = 4.5V SO-14 S2 S2S2 G1G2 Vin Absolute Maximum Ratings TA = 25°C unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Note 1a Note 1a & 1b Note 1c & 1d Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a & 1b Note 1c & 1d Package Marking and Ordering Information Device Marking Device Reel Size FDQ7698S FDQ7698S 13” ±16 ±16 −55 to +150 Units °C/W Tape width 16mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDQ7698S Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA Q2 30 VGS = −5 V, ID = 1 mA VGS = 0 V, ID = 250 µA Q1 30 Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C Coefficient ID = 250 µA, Referenced to 25°C Q1 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA 10 IGSSF Gate-Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA 100 IGSSR

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FDQ7698S

August 2003

FDQ7698S

Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package

The FDQ7698S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the low-side switch Q2 is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology.
• Q2 15 A, 30V. RDS on = VGS = 10V RDS on = 9 VGS = 4.5V
• Q1 12A, 30V. RDS on = 12 VGS = 10V RDS on = 16 VGS = 4.5V

SO-14

S2 S2S2 G1G2 Vin

Absolute Maximum Ratings TA = 25°C unless otherwise noted

VDSS VGSS ID

TJ, TSTG

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a & 1b Note 1c & 1d

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient Note 1a & 1b

Note 1c & 1d
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDQ7698S

FDQ7698S
13”
±16
±16
−55 to +150

Units
°C/W

Tape width 16mm

Quantity 2500 units
2002 Fairchild Semiconductor Corporation

FDQ7698S

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V,

ID = 1 mA

Q2 30

VGS = −5 V, ID = 1 mA

VGS = 0 V,

ID = 250 µA

Q1 30

Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C

Coefficient

ID = 250 µA, Referenced to 25°C Q1
mV/°C

IDSS

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
500 µA 10

IGSSF

Gate-Body Leakage, Forward

VGS = 16 V, VDS = 0 V
100 nA 100

IGSSR

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Datasheet ID: FDQ7698S 514273