FDPF5N50TYDTU

FDPF5N50TYDTU Datasheet

FDPF5N50T N-Channel UniFETTM MOSFET

Part	Datasheet
FDPF5N50TYDTU	FDPF5N50TYDTU (pdf)

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FDPF5N50T N-Channel UniFETTM MOSFET FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, Ω • RDS on = Ω Typ. VGS = 10 V, ID = A • Low Gate Charge Typ. 11 nC • Low Crss Typ. 5 pF • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supplylications November 2013 UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts. TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous TC = 25oC - Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate Above 25oC Note 1 Note 2 Note 1 Note 1 Note 3 TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDPF5N50T 500 ±30 5 3* 20* 225 5 28 -55 to +150 300 FDPF5N50T Unit V A mJ A mJ V/ns W/oC Unit oC/W 2012 Fairchild Semiconductor Corporation FDPF5N50T N-Channel UniFETTM MOSFET Package Marking and Ordering Information Part Number FDPF5N50T Top Mark FDPF5N50T Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Electrical Characteristics TC = 25oC unless otherwise noted. Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 uA, VGS = 0 V, TJ = 25oC ID = 250 uA, Referenced to 25oC VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125oC VGS = ±30 V, VDS = 0 V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 uA VGS = 10 V, ID = A VDS = 20 V, ID = A Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Qgd VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 400 V, ID = 5 A, VGS = 10 V Note 4 Switching Characteristics td on tr td off tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250 V, ID = 5 A, VGS = 10 V, RG = 25 Ω Note 4 Drain-Source Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 5 A VGS = 0 V, ISD = 5 A, dIF/dt = 100 A/us 1 Repetitive rating pulse-width limited by maximum junction temperature. 2 L = 18 mH, IAS = 5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3 ISD 5 A, di/dt 200 A/us, VDD BVDSS, starting TJ = 25°C. 4 Essentially independent of operating temperature typical characteristics.

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FDPF5N50T N-Channel UniFETTM MOSFET

FDPF5N50T

N-Channel UniFETTM MOSFET
500 V, 5 A, Ω
• RDS on = Ω Typ. VGS = 10 V, ID = A
• Low Gate Charge Typ. 11 nC
• Low Crss Typ. 5 pF
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supplylications

November 2013

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts.

TO-220F

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS

IDM EAS IAR EAR dv/dt

Parameter

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
- Continuous TC = 25oC - Continuous TC = 100oC - Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate Above 25oC

Note 1 Note 2 Note 1 Note 1 Note 3

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.

FDPF5N50T 500 ±30 5* 3* 20* 225 5 28
-55 to +150 300

FDPF5N50T

Unit V

A mJ A mJ V/ns W/oC

Unit
oC/W
2012 Fairchild Semiconductor Corporation

FDPF5N50T N-Channel UniFETTM MOSFET
Package Marking and Ordering Information

Part Number FDPF5N50T

Top Mark FDPF5N50T

Package TO-220F

Packing Method Tube

Reel Size N/A

Tape Width N/A

Electrical Characteristics TC = 25oC unless otherwise noted.

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250 uA, VGS = 0 V, TJ = 25oC ID = 250 uA, Referenced to 25oC

VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125oC VGS = ±30 V, VDS = 0 V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250 uA VGS = 10 V, ID = A VDS = 20 V, ID = A

Dynamic Characteristics

Ciss Coss Crss Qg tot Qgs Qgd

VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 400 V, ID = 5 A, VGS = 10 V

Note 4

Switching Characteristics
td on tr td off tf

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

VDD = 250 V, ID = 5 A, VGS = 10 V, RG = 25 Ω

Note 4

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

VGS = 0 V, ISD = 5 A

VGS = 0 V, ISD = 5 A, dIF/dt = 100 A/us
1 Repetitive rating pulse-width limited by maximum junction temperature.
2 L = 18 mH, IAS = 5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3 ISD 5 A, di/dt 200 A/us, VDD BVDSS, starting TJ = 25°C. 4 Essentially independent of operating temperature typical characteristics.

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Datasheet ID: FDPF5N50TYDTU 514267