FDP75N08

FDP75N08 Datasheet

FDP75N08A N-Channel UniFETTM MOSFET

Part	Datasheet
FDP75N08	FDP75N08 (pdf)

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FDP75N08A N-Channel UniFETTM MOSFET FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 • 75 A, 75 V, RDS on = 11 VGS = 10 V • Low Gate Charge Typ. 145 nC • Low Crss Typ. 86 pF • Fast Switching • Improved dv/dt Capability December 2013 UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts. TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ, TSTG TL Power Dissipation TC = 25°C - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. Note 1 Note 2 Note 1 Note 1 Note 3 2006 Fairchild Semiconductor Corporation FDP75N08A 75 47 300 ± 20 1738 75 137 -55 to +150 Unit V A V mJ A mJ V/ns W/°C °C FDP75N08A Unit °C/W °C/W FDP75N08A N-Channel UniFETTM MOSFET Package Marking and Ordering Information Device Marking FDP75N08A Device FDP75N08A Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 75 V, VGS = 0 V VDS = 60 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = -20 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS on Static Drain-Source On-Resistance VGS = 10 V, ID = A Forward Transconductance VDS = 40 V, ID = A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Switching Characteristics

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FDP75N08A N-Channel UniFETTM MOSFET

FDP75N08A

N-Channel UniFETTM MOSFET
75 V, 75 A, 11
• 75 A, 75 V, RDS on = 11 VGS = 10 V
• Low Gate Charge Typ. 145 nC
• Low Crss Typ. 86 pF
• Fast Switching
• Improved dv/dt Capability

December 2013

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts.

TO-220

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

TJ, TSTG TL

Power Dissipation TC = 25°C - Derate Above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, from Case for 5 Seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.

Note 1

Note 2 Note 1 Note 1 Note 3
2006 Fairchild Semiconductor Corporation

FDP75N08A
75 47 300 ± 20 1738 75 137 -55 to +150

Unit

V A V mJ A mJ V/ns W/°C °C

FDP75N08A

Unit
°C/W °C/W

FDP75N08A N-Channel UniFETTM MOSFET
Package Marking and Ordering Information

Device Marking FDP75N08A

Device FDP75N08A

Package TO-220

Reel Size Tube

Tape Width N/A

Quantity 50 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 75 V, VGS = 0 V

VDS = 60 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 20 V, VDS = 0 V

IGSSR

VGS = -20 V, VDS = 0 V

On Characteristics

VGS th

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS on

Static Drain-Source On-Resistance

VGS = 10 V, ID = A

Forward Transconductance

VDS = 40 V, ID = A

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Switching Characteristics

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Datasheet ID: FDP75N08 514255