FDPF52N20T

FDPF52N20T Datasheet

FDP52N20 / FDPF52N20T N-Channel MOSFET

Part	Datasheet
FDPF52N20T	FDPF52N20T (pdf)

Related Parts	Information
FDP52N20	FDP52N20

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FDP52N20 / FDPF52N20T N-Channel MOSFET FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, • RDS on = VGS = 10V, ID = 26A • Low gate charge Typ. 49nC • Low Crss Typ. 66pF • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant October 2007 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. TO-220 FDP Series TO-220F FDPF Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted Parameter VDSS VGSS IDM EAS IAR EAR dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC -Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Drain current limited by maximum junction temperature Thermal Characteristics Note 1 Note 2 Note 1 Note 1 Note 3 FDP52N20 FDPF52N20T ±30 208 2520 -55 to +150 Units V A mJ A mJ V/ns W/oC Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP52N20 FDPF52N20T Units oC/W 2007 Fairchild Semiconductor Corporation Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP52N20 Device FDP52N20 Package TO-220 Reel Size - Tape Width - FDPF52N20T FDPF52N20T TO-220F Quantity 50 Electrical Characteristics Parameter Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current Test Conditions Min. ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 200V, VGS = 0V VDS = 160V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 26A VDS = 40V, ID = 26A Note 4 Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 160V, ID = 52A VGS = 10V Note 4, 5 Switching Characteristics td on tr td off tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 100V, ID = 20A RG =

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FDP52N20 / FDPF52N20T N-Channel MOSFET

FDP52N20 / FDPF52N20T

N-Channel MOSFET
200V, 52A,
• RDS on = VGS = 10V, ID = 26A
• Low gate charge Typ. 49nC
• Low Crss Typ. 66pF
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant

October 2007

UniFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

TO-220 FDP Series

TO-220F FDPF Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Parameter

VDSS VGSS

IDM EAS IAR EAR dv/dt

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
-Continuous TC = 25oC -Continuous TC = 100oC
- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics

Note 1 Note 2 Note 1 Note 1 Note 3

FDP52N20 FDPF52N20T
±30
208*
2520
-55 to +150

Units V

A mJ A mJ V/ns W/oC

Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient

FDP52N20

FDPF52N20T

Units oC/W
2007 Fairchild Semiconductor Corporation
Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking FDP52N20

Device FDP52N20

Package TO-220

Reel Size -

Tape Width -

FDPF52N20T

FDPF52N20T

TO-220F

Quantity 50

Electrical Characteristics

Parameter

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

Test Conditions

Min.

ID = 250µA, VGS = 0V, TJ = 25oC

ID = 250µA, Referenced to 25oC

VDS = 200V, VGS = 0V

VDS = 160V, TC = 125oC

VGS = ±30V, VDS = 0V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250µA VGS = 10V, ID = 26A VDS = 40V, ID = 26A

Note 4

Dynamic Characteristics

Ciss Coss Crss Qg tot Qgs

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V f = 1MHz

VDS = 160V, ID = 52A VGS = 10V

Note 4, 5

Switching Characteristics
td on tr td off tf

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

VDD = 100V, ID = 20A RG =

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Datasheet ID: FDPF52N20T 514250