FDP3205
FDP3205 Datasheet
FDP3205 N-Channel MOSFET
| Part | Datasheet |
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FDP3205 |
FDP3205 (pdf) |
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| FDP3205 N-Channel MOSFET May 2008 FDP3205 N-Channel MOSFET 55V, 100A, 7.5mΩ • RDS on = 6.1mΩ VGS = 10V, ID = 59A • High performance trench technology for extermly low RDS on • High power and current handing capability • RoHS compliant • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. TO-220 FDP Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC - Pulsed Single Pulsed Avalanche Energy Power Dissipation TC = 25oC - Derate above 25oC Operating and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Note 1 Note 2 Ratings 55 ±20 100 390 365 150 -55 to +175 Ratings Units V A mJ W W/oC Units oC/W 2008 Fairchild Semiconductor Corporation FDP3205 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP3205 Device FDP3205 Package TO-220 Reel Size - Tape Width - Quantity 50units Electrical Characteristics Parameter Test Conditions Min. Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250uA, VGS = 0V, TJ = 25oC VDS = 44V, VGS = 0V VDS = 44V, TC = 150oC VGS = ±20V, VDS = 0V On Characteristics VGS th Gate Threshold Voltage VGS = VDS, ID = 250uA VGS = 10V, ID = 59A RDS on Static Drain to Source On Resistance VGS = 10V, ID = 59A TJ = 175oC Dynamic Characteristics Ciss Coss Crss RG Qg tot Qg th Qgs Qgs2 Qgd VDS = 25V, VGS = 0V f = 1MHz VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDS = 44V ID = 59A Ig = 1mA Switching Characteristics tON td on tr td off tf tOFF |
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