FDP16N50
FDP16N50 Datasheet
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
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FDP16N50 |
FDP16N50 (pdf) |
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| FDP16N50 / FDPF16N50 500V N-Channel MOSFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET • 16A, 500V, RDS on = = 10 V • Low gate charge typical 32 nC • Low Crss typical 20 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability April 2007 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-220 FDP Series TO-220F FDPF Series Absolute Maximum Ratings Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP16N50 FDPF16N50 64 ∗ ±30 -55 to +150 FDP16N50 Package Marking and Ordering Information Device Marking FDP16N50 FDPF16N50 Device FDP16N50 FDPF16N50 Package TO-220 TO-220F Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Breakdown Voltage Temperature Coefficient ID = 250uA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250uA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 8A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 8A Note 4 -- Ciss Input Capacitance VDS = 25V, VGS = 0V, |
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