FDP150N10A-F102

FDP150N10A-F102 Datasheet


FDP150N10A N-Channel MOSFET

Part Datasheet
FDP150N10A-F102 FDP150N10A-F102 FDP150N10A-F102 (pdf)
Related Parts Information
FDP150N10A FDP150N10A FDP150N10A
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FDP150N10A N-Channel MOSFET

FDP150N10A

N-Channel MOSFET
100 V, 50 A, 15 mΩ

November 2013
• RDS on = mΩ Typ. VGS = 10 V, ID = 50 A
• Fast Switching Speed
• Low Gate Charge, QG = nC Typ.
• High Performance Trench Technology for Extremely Low

RDS on
• High Power and Current Handling Capability
• RoHS Compliant

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter

TO-220

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS

IDM EAS dv/dt

TJ, TSTG TL

Parameter

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
- Continuous TC = 25oC - Continuous TC = 100oC - Pulsed

Note 1

Single Pulsed Avalanche Energy

Note 2

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate Above 25oC

Note 3

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

FDP150N10A_F102 100 ±20 50 36 200 91
-55 to +175 300

Unit V

A mJ V/ns W/oC

Thermal Characteristics

Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.

FDP150N10A_F102

Unit oC/W
2011 Fairchild Semiconductor Corporation

FDP150N10A N-Channel MOSFET
Package Marking and Ordering Information

Part Number FDP150N10A_F102

Top Mark FDP150N10A

Package TO-220

Packing Method Tube

Reel Size N/A

Tape Width N/A

Electrical Characteristics TC = 25oC unless otherwise noted.

Parameter

Test Conditions

Off Characteristics

BVDSS /

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250 uA, VGS = 0 V ID = 250 uA, Referenced to 25oC

VDS = 80 V, VGS = 0 V VDS = 80 V, TC = 150oC VGS = ±20 V, VDS = 0 V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250 uA VGS = 10 V, ID = 50 A VDS = 10 V, ID = 50 A

Dynamic Characteristics

Ciss Coss Crss Coss er Qg tot Qgs Qgs2 Qgd ESR

VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 0 V VDS = 50 V , VGS = 10 V, ID = 50 A
f = 1 MHz

Note 4

Min.
100 -

Typ.
1080 267 11 436

Switching Characteristics
td on tr td off tf

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

VDD = 50 V, ID = 50 A, VGS = 10 V, RG = Ω

Note 4

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current
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Datasheet ID: FDP150N10A-F102 514245