FDP085N10A

FDP085N10A Datasheet

FDP085N10A N-Channel MOSFET

Part	Datasheet
FDP085N10A	FDP085N10A (pdf)

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FDP085N10A N-Channel MOSFET FDP085N10A N-Channel MOSFET 100 V, 96 A, mΩ November 2013 • RDS on = mΩ Typ. VGS = 10 V, ID = 96 A • Fast Switching Speed • Low Gate Charge, QG = 31 nC Typ. • High Performance Trench Technology for Extremely Low RDS on • High Power and Current Handling Capability • RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies TO-220 MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS IDM EAS dv/dt TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous TC = 25oC - Continuous TC = 100oC - Pulsed Note 1 Single Pulsed Avalanche Energy Note 2 Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate Above 25oC Note 3 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDP085N10A_F102 100 ±20 96 68 384 269 188 -55 to +175 300 Unit V A mJ V/ns W/oC Thermal Characteristics Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDP085N10A_F102 Unit oC/W 2011 Fairchild Semiconductor Corporation FDP085N10A N-Channel MOSFET Package Marking and Ordering Information Part Number FDP085N10A_F102 Top Mark FDP085N10A Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Electrical Characteristics TC = 25oC unless otherwise noted. Parameter Test Conditions Off Characteristics BVDSS / Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 uA, VGS = 0 V,TC = 25oC ID = 250 uA, Referenced to 25oC VDS = 80 V, VGS = 0 V VDS = 80 V, TC = 150oC VGS = ±20 V, VDS = 0 V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 uA VGS = 10 V, ID = 96 A VDS = 10 V, ID = 96 A Dynamic Characteristics Ciss Coss Crss Coss er Qg tot Qgs Qgs2 Qgd ESR VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 0 V VGS = 10 V, VDS = 50 V, ID = 96 A f = 1 MHz Note 4 Min. 100 - Typ. 2025 468 20 752 31 Switching Characteristics td on tr td off tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 50 V, ID = 96 A, VGS = 10 V, RG = Ω Note 4 Drain-Source Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage

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FDP085N10A N-Channel MOSFET

FDP085N10A

N-Channel MOSFET
100 V, 96 A, mΩ

November 2013
• RDS on = mΩ Typ. VGS = 10 V, ID = 96 A
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC Typ.
• High Performance Trench Technology for Extremely Low

RDS on
• High Power and Current Handling Capability
• RoHS Compliant

This N-Channel MOSFET is produced using Fairchild Semiconductor’s process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies

TO-220

MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS

IDM EAS dv/dt

TJ, TSTG TL

Parameter

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
- Continuous TC = 25oC - Continuous TC = 100oC - Pulsed

Note 1

Single Pulsed Avalanche Energy

Note 2

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate Above 25oC

Note 3

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

FDP085N10A_F102 100 ±20 96 68 384 269 188
-55 to +175 300

Unit V

A mJ V/ns W/oC

Thermal Characteristics

Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.

FDP085N10A_F102

Unit oC/W
2011 Fairchild Semiconductor Corporation

FDP085N10A N-Channel MOSFET
Package Marking and Ordering Information

Part Number FDP085N10A_F102

Top Mark FDP085N10A

Package TO-220

Packing Method Tube

Reel Size N/A

Tape Width N/A

Electrical Characteristics TC = 25oC unless otherwise noted.

Parameter

Test Conditions

Off Characteristics

BVDSS /

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250 uA, VGS = 0 V,TC = 25oC ID = 250 uA, Referenced to 25oC

VDS = 80 V, VGS = 0 V VDS = 80 V, TC = 150oC VGS = ±20 V, VDS = 0 V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250 uA VGS = 10 V, ID = 96 A VDS = 10 V, ID = 96 A

Dynamic Characteristics

Ciss Coss Crss Coss er Qg tot Qgs Qgs2 Qgd ESR

VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 0 V VGS = 10 V, VDS = 50 V, ID = 96 A f = 1 MHz

Note 4

Min.
100 -

Typ.
2025 468 20 752 31

Switching Characteristics
td on tr td off tf

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

VDD = 50 V, ID = 96 A, VGS = 10 V, RG = Ω

Note 4

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

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Datasheet ID: FDP085N10A 514243