FDPF8N50NZ
FDPF8N50NZ Datasheet
FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET
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FDPF8N50NZ |
FDPF8N50NZ (pdf) |
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FDPF8N50NZT |
FDPF8N50NZT |
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| FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 October 2013 • RDS on = 770 Typ. VGS = 10 V, ID = 4 A • Low Gate Charge Typ. 14 nC • Low Crss Typ. 5 pF • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts. TO-220 TO-220F MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous TC = 25oC - Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDP8N50NZ FDPF8N50NZ ±25 Note 1 Note 2 Note 1 Note 1 Note 3 -55 to +150 FDP8N50NZ FDPF8N50NZ Unit V A mJ A mJ V/ns W/oC Unit Package Marking and Ordering Information Device Marking FDP8N50NZ FDPF8N50NZ Device FDP8N50NZ FDPF8N50NZ Package TO-220 TO-220F Reel Size Tube Tape Width N/A N/A Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Min. Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = VGS = 0V, TC = 25oC ID = Referenced to 25oC VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±25V, VDS = 0V On Characteristics VGS th Gate Threshold Voltage VGS = VDS, ID = RDS on Static Drain to Source On Resistance VGS = 10V, ID = 4A Forward Transconductance VDS = 20V, ID = 4A Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Qgd VDS = 25V, VGS = 0V f = 1MHz VDS = 400V,ID = 8A VGS = 10V Note 4 Switching Characteristics td on tr td off tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 8A RG = VGS = 10V Note 4 |
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