FDP79N15
FDP79N15 Datasheet
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
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FDP79N15 |
FDP79N15 (pdf) |
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FDPF79N15 |
FDPF79N15 |
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| FDP79N15 / FDPF79N15 150V N-Channel MOSFET FDP79N15 / FDPF79N15 150V N-Channel MOSFET • 79A, 150V, RDS on = = 10 V • Low gate charge typical 56 nC • Low Crss typical 96pF • Fast switching • Improved dv/dt capability April 2007 UniFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-220 FDP Series TO-220F FDPF Series Absolute Maximum Ratings Parameter VDSS ID Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics FDP79N15 FDPF79N15 316* ± 30 1669 -55 to +150 Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP79N15 FDPF79N15 Unit V A V mJ A mJ V/ns W/°C °C Unit Package Marking and Ordering Information Device Marking FDP79N15 FDPF79N15 Device FDP79N15 FDPF79N15 Package TO-220 TO-220F Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA, TJ = 25°C Breakdown Voltage Temperature Coefficient ID = 250uA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V VDS = 120V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250uA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 39.5A Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Switching Characteristics |
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