FDPF7N50F
FDPF7N50F Datasheet
FDP7N50F / FDPF7N50F N-Channel MOSFET
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FDPF7N50F |
FDPF7N50F (pdf) |
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| FDP7N50F / FDPF7N50F N-Channel MOSFET FDP7N50F / FDPF7N50F N-Channel MOSFET, FRFET 500V, 6A, • RDS on = VGS = 10V, ID = 3A • Low gate charge Typ. 15nC • Low Crss Typ. 6.3pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant November 2007 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. TO-220 FDP Series TO-220F FDPF Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Parameter VDSS VGSS IDM EAS IAR EAR dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC -Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Note 1 Note 2 Note 1 Note 1 Note 3 FDP7N50F FDPF7N50F ±30 -55 to +150 Units V A mJ A mJ V/ns W/oC FDP7N50F FDPF7N50F Units oC/W 2007 Fairchild Semiconductor Corporation Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP7N50F Device FDP7N50F Package TO-220 Reel Size - Tape Width - FDPF7N50F FDPF7N50F TO-220F Quantity 50 Electrical Characteristics Parameter Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current Test Conditions Min. ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 3A VDS = 40V, ID = 3A Note 4 Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 6A VGS = 10V Note 4, 5 Switching Characteristics td on tr td off tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 6A RG = |
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