FDN371N

FDN371N Datasheet

FDN371N

Part	Datasheet
FDN371N	FDN371N (pdf)

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FDN371N September 2001 FDN371N 20V N-Channel MOSFET This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • Load switch • Battery protection • Power management • A, 20 V. RDS ON = 50 VGS = V RDS ON = 60 VGS = V • Low gate charge nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON SuperSOTTM-3 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDN371N 7’’ Ratings 20 ± 12 10 to +150 250 75 Tape width 8mm Units °C/W °C/W Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDN371N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V IGSSF Leakage, Forward VGS = 12 V, VDS = 0 V IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient

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FDN371N

September 2001

FDN371N
20V N-Channel MOSFET

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
• Load switch
• Battery protection
• Power management
• A, 20 V.

RDS ON = 50 VGS = V RDS ON = 60 VGS = V
• Low gate charge nC typical
• Fast switching speed
• High performance trench technology for extremely low RDS ON

SuperSOTTM-3

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDN371N
7’’

Ratings
20 ± 12 10 to +150
250 75

Tape width 8mm

Units
°C/W °C/W

Quantity 3000 units
2001 Fairchild Semiconductor Corporation

FDN371N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V,

ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA,Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 16 V,

VGS = 0 V

IGSSF

Leakage, Forward

VGS = 12 V,

VDS = 0 V

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

VGS th

RDS on

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDN371N 514234