FDN361AN

FDN361AN Datasheet


FDN361AN

Part Datasheet
FDN361AN FDN361AN FDN361AN (pdf)
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FDN361AN

April 1999

FDN361AN

N-Channel, Logic Level, PowerTrenchΤΜ

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Applications
• DC/DC converter
• Load switch
• Motor drives
• A, 30 V. RDS on = VGS = 10 V

RDS on = VGS = V.
• Low gate charge 2.1nC typical
• Fast switching speed.
• High performance trench technology for extremely
low RDS on .
• High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with 30% higher power handling capability.

SuperSOT TM-3

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous
- Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDN361AN
7’’

FDN361AN
30 ±20
8 -55 to +150
250 75

Units
°C/W °C/W

Tape width 8mm

Quantity 3000 units

Fairchild Semiconductor Corporation

FDN361AN

DMOS Electrical Characteristics

TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSSF

IGSSR

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C

VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
30 24

V mV/°C
100 nA
-100 nA

On Characteristics Note 2

VGS th

RDS on

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance

ID on

On-State Drain Current

Forward Transconductance

Dynamic Characteristics
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Datasheet ID: FDN361AN 514233