FDN361AN
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FDN361AN (pdf) |
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FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Load switch • Motor drives • A, 30 V. RDS on = VGS = 10 V RDS on = VGS = V. • Low gate charge 2.1nC typical • Fast switching speed. • High performance trench technology for extremely low RDS on . • High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SuperSOT TM-3 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDN361AN 7’’ FDN361AN 30 ±20 8 -55 to +150 250 75 Units °C/W °C/W Tape width 8mm Quantity 3000 units Fairchild Semiconductor Corporation FDN361AN DMOS Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 24 V mV/°C 100 nA -100 nA On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID on On-State Drain Current Forward Transconductance Dynamic Characteristics |
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