FDN359BN_F095
FDN359BN_F095 Datasheet
FDN359BN
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FDN359BN_F095 |
FDN359BN_F095 (pdf) |
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FDN359BN |
FDN359BN |
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| FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V • Very fast switching speed. • Low gate charge 5nC typical • High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SuperSOTTM-3 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous Note 1a Pulsed Maximum Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 359B FDN359BN 7’’ Ratings 30 ±20 15 −55 to +150 250 75 Tape width 8mm Units °C/W °C/W Quantity 3000 units 2006 Fairchild Semiconductor Corporation FDN359BN Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V TJ = -55OC IGSS Leakage VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current |
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