FDMS8692

FDMS8692 Datasheet

FDMS8692 N-Channel MOSFET

Part	Datasheet
FDMS8692	FDMS8692 (pdf)

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FDMS8692 N-Channel MOSFET FDMS8692 N-Channel 30V, 28A, 9.0m: May 2009 - Max rDS on = VGS = 10V, ID = 12A - Max rDS on = 14.0m at VGS = 4.5V, ID = 10.5A - Advanced Package and Silicon combination for low rDS on and high efficiency - MSL1 robust package design - RoHS Compliant The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. - Low Side for Synchronous Buck to Power Core Processor - Secondary Side Synchronous Rectifier - Low Side Switch in POL DC/DC Converter - Oring FET/ Load Switch Bottom Pin 1 S D5 D6 Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 30 ±20 28 48 12 120 72 41 -55 to +150 Units V mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDMS8692 Device FDMS8692 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000units 2009 Fairchild Semiconductor Corporation FDMS8692 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250PA, VGS = 0V ID = 250PA, referenced to 25°C mV/°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250PA ID = 250PA, referenced to 25°C VGS = 10V, ID = 12A VGS = ID = 10.5A VGS = 10V, ID = 12A, TJ = 125°C VDD = 10V, ID = 12A mV/°C Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 950 1265 pF Switching Characteristics td on tr td off tf Qg Qgs Qgd

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FDMS8692 N-Channel MOSFET

FDMS8692

N-Channel
30V, 28A, 9.0m:

May 2009
- Max rDS on = VGS = 10V, ID = 12A - Max rDS on = 14.0m at VGS = 4.5V, ID = 10.5A - Advanced Package and Silicon combination for
low rDS on and high efficiency - MSL1 robust package design - RoHS Compliant

The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance.
- Low Side for Synchronous Buck to Power Core Processor
- Secondary Side Synchronous Rectifier
- Low Side Switch in POL DC/DC Converter
- Oring FET/ Load Switch

Bottom

Pin 1 S

D5 D6

Power 56

D7 D8
4G 3S 2S 1S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25°C TC = 25°C TA = 25°C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25°C

Power Dissipation

TA = 25°C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 3

Note 1a

Ratings 30 ±20 28 48 12 120 72 41
-55 to +150

Units V
mJ W °C

RTJC RTJA

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDMS8692

Device FDMS8692

Package Power 56

Reel Size 13’’

Tape Width 12mm

Quantity 3000units
2009 Fairchild Semiconductor Corporation

FDMS8692 N-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS 'BVDSS IDSS IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250PA, VGS = 0V

ID = 250PA, referenced to 25°C
mV/°C

VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V
±100 nA

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250PA

ID = 250PA, referenced to 25°C

VGS = 10V, ID = 12A VGS = ID = 10.5A VGS = 10V, ID = 12A, TJ = 125°C VDD = 10V, ID = 12A
mV/°C

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 15V, VGS = 0V, f = 1MHz
f = 1MHz
950 1265 pF

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

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Datasheet ID: FDMS8692 514230